Bit storage by $360^{\circ }$ domain walls in ferromagnetic nanorings

Abstract

We propose a design for the magnetic memory cell which allows an efficient storage, recording, and readout of information on the basis of thin film ferromagnetic nanorings. The information bit is represented by the polarity of a stable 360${}^{\circ }$ domain wall introduced into the ring. Switching between the two magnetization states is achieved by the current applied to a wire passing through the ring, whereby the $360^{\circ }$ domain wall splits into two charged $180^{\circ }$ walls, which then move to the opposite extreme of the ring to recombine into a $360^{\circ }$ wall of the opposite polarity.

References in corpus (3)

• Magnetic bistability and controllable reversal of asymmetric ferromagnetic nanorings
• Magnetic Reversal in Nanoscopic Ferromagnetic Rings
• Current-driven excitations in magnetic multilayers: a brief review

Cited by in corpus (6)

• Stability of 2pi domain walls in ferromagnetic nanorings
• Switching of +/-360deg domain wall states in a nanoring by an azimuthal Oersted field
• Topological invariants of vortices, merons, skyrmions, and their combinations in continuous and discrete systems
• Domain-wall complexes in ferromagnetic stripes
• A novel method for the injection and manipulation of magnetic charge states in nanostructures
• Transverse domain walls in thin ferromagnetic strips