Al doped graphene: A promising material for hydrogen storage at room temperature
arXiv:0811.1856 · doi:10.1063/1.3103327
Abstract
A promising material for hydrogen storage at room temperature-Al doped graphene was proposed theoretically by using density functional theory calculation. Hydrogen storage capacity of 5.13 wt% was predicted at T = 300 K and P = 0.1 Gpa with adsorption energy Eb = -0.260 eV/H2. This is close to the target of 6 wt% and satisfies the requirement of immobilization hydrogen with Eb of -0.2 ~ -0.4 eV/H2 at ambient temperature and modest pressure for commercial applications specified by U.S. Department of Energy. It is believed that the doped Al varies the electronic structures of both C and H2. The bands of H2 overlapping with those of Al and C synchronously are the underlying mechanism of hydrogen storage capacity enhancement.
20 pages, 2 tables, and 5 figures
References in corpus (2)
Cited by in corpus (7)
- Direct Experimental Evidence of Metal-Mediated Etching of Suspended Graphene
- Highly Efficient Hydrogen Storage of Sc Decorated Biphenylene Monolayer near Ambient-temperature: An Ab-initio Simulation
- High Capacity Hydrogen Storage on Zirconium decorated γ-graphyne: A systematic first-principles study
- Phonons in graphene with point defects
- Lattice thermal conductivity of graphene with conventionally isotopic defects
- Platinum-Decorated Graphene: Experimental Insight into Growth Mechanisms and Hydrogen Adsorption Properties
- Carbon and Boron Nitride nanostructures for Hydrogen storage applications through a theoretical perspective