Energy-resolved spatial inhomogeneity of disordered Mott systems
arXiv:0811.0320 · doi:10.1016/j.physb.2009.07.056
Abstract
We investigate the effects of weak to moderate disorder on the T=0 Mott metal-insulator transition in two dimensions. Our model calculations demonstrate that the electronic states close to the Fermi energy become more spatially homogeneous in the critical region. Remarkably, the higher energy states show the opposite behavior: they display enhanced spatial inhomogeneity precisely in the close vicinity to the Mott transition. We suggest that such energy-resolved disorder screening is a generic property of disordered Mott systems.
6 pages, 6 figures. Submitted to the Proceedings of the SCES 2008
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Cited by in corpus (7)
- Quantum ripples in strongly correlated metals
- Typical-Medium Theory of Mott-Anderson Localization
- A local theory for Mott-Anderson localization
- Emergence of non-Fermi liquid dynamics through non-local correlations in an interacting disordered system
- Analysis of the Disorder-Induced Zero Bias Anomaly in the Anderson-Hubbard Model
- Non-Gaussian Spatial Correlations Dramatically Weaken Localization
- Persistence of energy-dependent localization in the Anderson-Hubbard model with increasing system size and doping