Admittance and noise in an electrically driven nano-structure: Interplay between quantum coherence and statistics
arXiv:0810.5402 · doi:10.1103/PhysRevLett.101.116804
Abstract
We investigate the interplay between the quantum coherence and statistics in electrically driven nano-structures. We obtain expression for the admittance and the current noise for a driven nano-capacitor in terms of the Floquet scattering matrix and derive a non-equilibrium fluctuation-dissipation relation. As an interplay between the quantum phase coherence and the many-body correlation, the admittance has peak values whenever the noise power shows a step as a function of near-by gate voltage. Our theory is demonstrated by calculating the admittance and noise of driven double quantum dots.
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- Spin-dependent pump current and noise in an adiabatic quantum pump based on domain walls in a magnetic nanowire
- Pumped shot noise in adiabatically modulated graphene-based double-barrier structures
- Fano resonance in the nonadiabatic pumped shot noise of a time-dependent potential well
- Out-of-Equilibrium Admittance of Single Electron Box Under Strong Coulomb Blockade
- Charge relaxation resistance in the cotunneling regime of multi-channel Coulomb blockade: Violation of Korringa-Shiba relation
- Out-of-equilibrium fluctuation-dissipation relations verified by the electrical and thermoelectrical ac-conductances in a quantum dot