Admittance and noise in an electrically driven nano-structure: Interplay between quantum coherence and statistics

Abstract

We investigate the interplay between the quantum coherence and statistics in electrically driven nano-structures. We obtain expression for the admittance and the current noise for a driven nano-capacitor in terms of the Floquet scattering matrix and derive a non-equilibrium fluctuation-dissipation relation. As an interplay between the quantum phase coherence and the many-body correlation, the admittance has peak values whenever the noise power shows a step as a function of near-by gate voltage. Our theory is demonstrated by calculating the admittance and noise of driven double quantum dots.

References in corpus (3)

• An On-Demand Coherent Single Electron Source
• Mesoscopic Charge Relaxation
• Dynamics of Quantum Noise in a Tunnel Junction under ac Excitation

Cited by in corpus (1)

• Heat production and current noise for single- and double-cavity quantum capacitors