Vacancy defect positron lifetimes in strontium titanate

Abstract

The results of positron annihilation lifetime spectroscopy measurements on undoped, electron irradiated, and Nb doped SrTiO3 single crystals are reported. Perfect lattice and vacancy defect positron lifetimes were calculated using two different first-principles schemes. The Sr vacancy defect related positron lifetime was obtained from measurements on Nb doped, electron irradiated, and vacuum annealed samples. Undoped crystals showed a defect lifetime component dominated by trapping to Ti vacancy related defects.

31 pages 5 figures 2 Tables

References in corpus (3)

• Coherent and Incoherent States of Electron-doped SrTiO3
• Three real-space discretization techniques in electronic structure calculations
• Multiple Time Scales in Diffraction Measurements of Diffusive Surface Relaxation

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• Voltage bias induced modification of all oxide Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 junctions
• Origin of Oxygen Partial Pressure-Dependent Conductivity in SrTiO3