Relevant energy scale in hybrid mesoscopic Josephson junctions
arXiv:0810.2196 · doi:10.1103/PhysRevB.78.052506
Abstract
Transport properties of high quality Nb/semiconductor/Nb long Josephson junctions based on metamorphic In_0.75Ga_0.25As epitaxial layers are reported. Different junction geometries and fabrication procedures are presented that allow a systematic comparison with quasiclassical theory predictions. The impact of junction transparency is highlighted and a procedure capable of yielding a high junction quality factor is identified.
11 pages, 3 figures
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Cited by in corpus (8)
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- Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot
- Preserving the Josephson Coupling of Twisted Cuprate Junctions via Tailored Silicon Nitride Circuits Boards
- Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions