Understanding the nature of electronic effective mass in double-doped SrTiO${}_3$

Abstract

We present an approach to tune the effective mass in an oxide semiconductor by a double doping mechanism. We demonstrate this in a model oxide system Sr${}_{1-x}$La${}_x$TiO${}_{3-\delta }$, where we can tune the effective mass ranging from 6--20${\mathrm{m}}_{\mathrm{e}}$ as a function of filling or carrier concentration and the scattering mechanism, which are dependent on the chosen lanthanum and oxygen vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr${}_{1-x}$La${}_x$TiO${}_{3-\delta }$. Our method, which shows that the effective mass decreases with carrier concentration, provides a means for understanding the nature of transport processes in oxides, which typically have large effective mass and low electron mobility, contrary to the tradional high mobility semiconductors.

5 pages with 4 figures

References in corpus (2)

• Electron-phonon interaction and charge carrier mass enhancement in SrTiO3
• Enhanced effective mass in doped SrTiO3 and related perovskites

Cited by in corpus (8)

• Oxygen vacancy induced electronic structure modification of KTaO${}_3$
• Thermopower enhancement by fractional layer control in 2D oxide superlattices
• Electron degeneracy and intrinsic magnetic properties of epitaxial Nb:SrTiO${}_3$ thin-films controlled by defects
• Direct spectroscopic observation of a shallow hydrogen-like donor state in insulating SrTiO${}_3$
• Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nanometer to micrometer and mosaicity effects
• Neutral defects in SrTiO3 studied with screened hybrid density functional theory
• Exact Green's function approach to RKKY interactions
• Self-consistent DFT+$U$+$V$ study of oxygen vacancies in SrTiO${}_3$