Fermi surfaces of single layer dielectrics on transition metals

Abstract

Single sheets of hexagonal boron nitride on transition metals provide a model system for single layer dielectrics. The progress in the understanding of h-BN layers on transition metals of the last 10 years are shortly reviewed. Particular emphasis lies on the boron nitride nanomesh on Rh(111), which is a corrugated single sheet of h-BN, where the corrugation imposes strong lateral electric fields. Fermi surface maps of h-BN/Rh(111) and Rh(111) are compared. A h-BN layer on Rh(111) introduces no new bands at the Fermi energy, which is expected for an insulator. The lateral electric fields of h-BN nanomesh violate the conservation law for parallel momentum in photoemission and smear out the momentum distribution curves on the Fermi surface.

14 pages, 6 figures, 1 table, 1 equation, Accepted for publication in the Special Surface Science issue in honor of Gerhard Ertl's Nobel Prize

References in corpus (2)

• Two Dimensional Ir-Cluster Lattices on Moiré of Graphene with Ir(111)
• Rocking motion induced charging of C60 on h-BN/Ni(111)

Cited by in corpus (5)

• An Artificially Lattice Mismatched Graphene/Metal Interface: Graphene/Ni/Ir(111)
• Electronic structure of Graphene/Co interfaces
• Field effect doping of graphene in metal|dielectric|graphene heterostructures: a model based upon first-principles calculations
• Copper underpotential deposition on boron nitride nanomesh
• Corrugated single layer templates for molecules: From h-BN Nanomesh to Graphene based Quantum dot arrays