Atomistic Simulations of Elastic and Plastic Properties in Amorphous Silicon

Abstract

We present here potential dependent mechanical properties of amorphous silicon studied through molecular dynamics (MD) at low temperature. On average, the localization of elementary plastic events and the co-ordination defect-sites appears to be correlated. For Tersoff potential and SW potential the plastic events centered on defects-sites prefer 5-fold defect sites, while for modified Stillinger-Weber potential such plastic events choose 3-fold defect sites. We also analyze the non-affine displacement field in amorphous silicon obtained for different shear regime. The non-affine displacement field localizes when plastic events occur and shows elementary shear band formation at higher shear strains.

conference, 7 pages, 6 figures

References in corpus (2)

• Plastic Response of a 2D Lennard-Jones amorphous solid: Detailed analysis of the local rearrangements at very slow strain-rate
• Particle displacements in the elastic deformation of amorphous materials: local fluctuations vs. non-affine field

Cited by in corpus (7)

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• Strain localization and anisotropic correlations in a mesoscopic model of amorphous plasticity
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• Crystallization of amorphous silicon induced by mechanical shear deformations
• Normal modes, and acoustic properties, of an elastic solid with line defects
• Amorphous silicon under mechanical shear deformations: shear velocity and temperature effects