Laser-induced operations with charge qubits in a double-well nanostructure

Abstract

We present the results of theoretical studies on operations with charge qubits in the system composed of two tunnel-coupled semiconductor quantum dots whose two lowest states (localized in different dots) define the logical qubit states while two excited states (delocalized between the dots) serve for the electron transfer from one dot to another under the influence of the laser pulse. It is shown that in the case of small energy separation between the excited levels, the optimal (from the viewpoint of minimal single-qubit operation time and maximum operation fidelity) strategy is to tune the laser frequency between the excited levels. The pulse parameters for implementation of the quantum NOT operation are determined. Analytical results obtained in the rotating-wave approximation are confirmed by rigorous numerical calculations.

28 pages, 6 figures

References in corpus (6)

• Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
• Decoherence Rate of Semiconductor Charge Qubit Coupled to Acoustic Phonon Reservoir
• Rabi oscillations in the four-level double-dot structure under the influence of the resonant pulse
• Single-qubit operations in the double-donor structure driven by optical and voltage pulses
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• Phonon-induced decoherence of the two-level quantum subsystem due to relaxation and dephasing processes