Carrier relaxation in Si/SiO quantum dots
arXiv:0805.3451 · doi:10.1016/j.physe.2008.08.053
Abstract
Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated for such transitions. The probability of intraband transition of a confined hole emitting several optical phonons is estimated.
8 pages, 2 figures, submitted as an extended abstract to the E-MRS Spring Meeting 2008