Quenching along a gapless line: A different exponent for defect density

Abstract

We use a new quenching scheme to study the dynamics of a one-dimensional anisotropic $XY$ spin-1/2 chain in the presence of a transverse field which alternates between the values $h+\de$ and $h-\de$ from site to site. In this quenching scheme, the parameter denoting the anisotropy of interaction ($\ga$) is linearly quenched from $-\infty$ to $+\infty$ as $\ga = t/τ$, keeping the total strength of interaction $J$ fixed. The system traverses through a gapless phase when $\ga$ is quenched along the critical surface $h^2 = \de^2 + J^2$ in the parameter space spanned by $h$, $\de$ and $\ga$. By mapping to an equivalent two-level Landau-Zener problem, we show that the defect density in the final state scales as $1/{\tau }^{1/3}$, a behavior that has not been observed in previous studies of quenching through a gapless phase. We also generalize the model incorporating additional alternations in the anisotropy or in the strength of the interaction, and derive an identical result under a similar quenching. Based on the above results, we propose a general scaling of the defect density with the quenching rate $\tau$ for quenching along a gapless critical line.

6 Pages, 2 figures, accepted in Phys. Rev. B

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