Electronic structure of Ga${}_{1-x}$Cr${}_x$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy

Abstract

The electronic structure of the magnetic semiconductor Ga${}_{1-x}$Cr${}_x$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the formation of a small amount of Cr${}^{2+}$ species caused by the electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.

5 pages, 3 figures