Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

Abstract

The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from |g*|=3.8 +/- 0.2 for the third subband to |g*|=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures.

[Version 2] Revtex4, 11 pages, 3 figures, accepted for publication in Applied Physics Letters

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• Possible Spin Polarization in a One-Dimensional Electron Gas
• Tunable Non-local Spin Control in a Coupled Quantum Dot System
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• Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices
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• Magnetic Field Inducing Zeeman Splitting and Anomalous Conductance Reduction of Half-integer Quantized Plateaus in InAs Quantum Wires
• Transconductance and effective Landé factors for quantum point contacts: spin-orbit coupling and interaction effects
• Tracking the energies of one-dimensional subband edges in quantum point contacts using dc conductance measurements
• Large Zeeman Splitting in Out-of-Plane Magnetic Field in a Double-Layer Quantum Point Contact
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• Quantized conductance in a one-dimensional ballistic oxide nanodevice