Study of low energy Si${}_5^{-}$ and Cs${}^{-}$ implantation induced amorphization effects in Si(100)

Abstract

The damage growth and surface modifications in Si(100), induced by 25 keV Si${}_5^{-}$ cluster ions, as a function of fluence, $\ddot{I}•$, has been studied using atomic force microscopy (AFM) and channeling Rutherford backscattering spectrometry (CRBS). CRBS results indicate a nonlinear growth in damage from which it has been possible to get a threshold fluence, $\ddot{I}{•}_0$, for amorphization as $2.5\times 10^{13}$ ions-cm${}^{-2}$. For $\ddot{I}•$ below $\ddot{I}{•}_0$, a growth in damage as well as surface roughness has been observed. At a $\ddot{I}•$ of $1\times 10^{14}$ ions-cm${}^{-2}$, damage saturation coupled with a much reduced surface roughness has been found. In this case a power spectrum analysis of AFM data showed a significant drop, in spectral density, as compared to the same obtained for a fluence, $\ddot{I}•<\ddot{I}{•}_0$. This drop, together with damage saturation, can be correlated with a transition to a stress relaxed amorphous phase. Irradiation with similar mass Cs${}^{-}$ ions, at the same energy and fluence, has been found to result in a reduced accumulation of defects in the near surface region leading to reduced surface features.

7 pages, 4 figures