Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6
arXiv:0804.4387 · doi:10.1063/1.2929745
Abstract
Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity often is measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution then can be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.
13 pages, 4 figures