Interface-driven magnetocapacitance in a broad range of materials

Abstract

Triggered by the revival of multiferroic materials, a lot of effort is presently undergoing as to find a coupling between a capacitance and a magnetic field. We show in this report that interfaces are the right way of increasing such a coupling provided free charges are localized on these two-dimensional defects. Starting from commercial diodes at room temperature and going to grain boundaries in giant permittivity materials and to ferroelectric domain walls, a clear magnetocapacitance is reported which is all the time more than a few percent for a magnetic field of 90kOe. The only tuning parameter for such strong coupling to arise is the dielectric relaxation time which is reached on tuning the operating frequency and the temperature in many different materials.

References in corpus (2)

• Magnetodielectric effect without multiferroic coupling
• High Dielectric Permittivity in AFe${}_{1/2}$B${}_{1/2}$O${}_3$ Nonferroelectric Perovskite Ceramics (A - Ba, Sr, Ca; B - Nb, Ta, Sb)

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• Magnetocapacitance without magnetism
• Effect of (Cu/Fe)O5 bipyramid size and separation on magnetic and dielectric properties of rare earth layered perovskite LaBaCuFeO5 and LuBaCuFeO5
• Magnetic field tuning of polaron losses in Fe doped BaTiO3 single crystals