Modeling semi-conductor thermal properties. The dispersion role

Abstract

We study heat transport in semiconductor nanostructures by solving the Boltzmann Transport Equation (BTE) by means of the Discrete Ordinate Method (DOM). Relaxation time and phase and group velocitiy spectral dependencies are taken into account. The Holland model of phonon relaxation time is revisited and recalculated from dispersion relations (taken in litterature) in order to match bulk silicon and germanium values. This improved model is then used to predict silicon nanowire and nanofilm thermal properties in both ballistic and mesoscopic regimes.

References in corpus (2)

• Calculation of nanowire thermal conductivity using complete phonon dispersion relations
• Monte Carlo transient phonons transport in silicon and germanium at nanoscales

Cited by in corpus (8)

• On the emergence of heat waves in the transient thermal grating geometry
• A fast-converging scheme for the Phonon Boltzmann equation with dual relaxation times
• Non-monotonic heat dissipation phenomenon in close-packed quasi-2D and 3D hotspot system
• A fast synthetic iterative scheme for the stationary phonon Boltzmann transport equation
• Physics-Informed Neural Networks for Solving Multiscale Mode-Resolved Phonon Boltzmann Transport Equation
• Discrete unified gas kinetic scheme for multiscale heat transfer with arbitrary temperature difference
• An implicit kinetic scheme for multiscale heat transfer problem accounting for phonon dispersion and polarization
• Radial thermal rectification in the concentric silicon ring from ballistic to diffusive regime