Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers
arXiv:0803.0177 · doi:10.1364/OE.16.017554
Abstract
We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.
arXiv comment7 pages, 3 figures
References in corpus (6)
- Ray and wave chaos in asymmetric resonant optical cavities
- Boundary element method for resonances in dielectric microcavities
- Control of lasing in fully chaotic open microcavities by tailoring the shape factor
- Light emission patterns from stadium-shaped semiconductor microcavity lasers
- Ray-wave correspondence in the nonlinear description of stadium-cavity lasers
- Regular Spectra and Universal Directionality of Emitted Radiation from a Quadrupolar Deformed Microcavity