Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers

Abstract

We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.

7 pages, 3 figures

References in corpus (3)

• Light emission patterns from stadium-shaped semiconductor microcavity lasers
• Ray-wave correspondence in the nonlinear description of stadium-cavity lasers
• Regular Spectra and Universal Directionality of Emitted Radiation from a Quadrupolar Deformed Microcavity

Cited by in corpus (1)

• Chaos-assisted emission from asymmetric resonant cavity microlasers