Full Counting Statistics of Multiple Andreev Reflections in incoherent diffusive superconducting junctions
arXiv:0712.1504 · doi:10.1007/s00339-007-4191-6
Abstract
We present a theory for the full distribution of current fluctuations in incoherent diffusive superconducting junctions, subjected to a voltage bias. This theory of full counting statistics of incoherent multiple Andreev reflections is valid for arbitrary applied voltage. We present a detailed discussion of the properties of the first four cumulants as well as the low and high voltage regimes of the full counting statistics. The work is an extension of the results of Pilgram and the author, Phys. Rev. Lett. 94, 086806 (2005).
Included in special issue Spin Physics of Superconducting heterostructures of Applied Physics A: Materials Science & Processing
References in corpus (9)
- Stochastic Path Integral Formulation of Full Counting Statistics
- Fluctuation Statistics in Networks: a Stochastic Path Integral Approach
- Full counting statistics of multiple Andreev reflections
- DC-transport in superconducting point contacts: a full counting statistics view
- Full counting statistics of multiple Andreev reflection
- Full counting statistics of incoherent Andreev transport
- Noise and Full Counting Statistics of Incoherent Multiple Andreev Reflection
- Inelastic relaxation and noise temperature in S/N/S junctions
- Shot noise of large charge quanta in superconductor/semiconductor/superconductor junctions