Large voltage from spin pumping in magnetic tunnel junctions

Abstract

We studied the response of a ferromagnet-insulator-normal metal tunnel structure under an external oscillating radio frequency (R.F.) magnetic field. The D. C. voltage across the junction is calculated and is found not to decrease despite the high resistance of the junction; instead, it is of the order of $\mu V$ to $100\mu V$, much larger than the experimentally observed value (100 nano-V) in the "strong coupled" ohmic ferromagnet-normal metal bilayers. This is consistent with recent experimental results in tunnel structures, where the voltage is larger than $\mu V$s. The damping and loss of an external RF field in this structure is calculated.

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Cited by in corpus (4)

• Spin and charge pumping in magnetic tunnel junctions with precessing magnetization: A nonequilibrium Green function approach
• Charge pumping by magnetization dynamics in magnetic and semi-magnetic tunnel junctions with interfacial Rashba or bulk extrinsic spin-orbit couplings
• Tunnel-barrier-enhanced dc voltage signals induced by magnetization dynamics in magnetic tunnel junctions
• Nonlocal optical generation of spin and charge currents on the surface of magnetic insulators using total absorption and surface plasmons