Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces

Abstract

We have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar${}^{+}$-ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs substrate and completely reacted with GaAs. In the deep region, the Mn 2$p$ core-level and Mn 3$d$ valence-band spectra of the Mn/GaAs (001) sample heated to 600 ${}^{\circ }$C were similar to those of Ga${}_{1-x}$Mn${}_x$As, zinc-blende-type MnAs dots, and/or interstitial Mn in tetrahedrally coordinated by As atoms, suggesting that the Mn 3$d$ states were essentially localized but were hybridized with the electronic states of the host GaAs. Ferromagnetism was observed in the dilute Mn phase.

5 pages, 4 figures