Attractive interaction of Indium with point defects and silicon in GeSi

Abstract

In electron irradiated Ge${}_{0.98}$Si${}_{0.02}$, In-vacancy and In-interstitial complexes were observed in analogy with defects in pure Ge. Isochronal annealing measurements reveal that the temperature of dissociation of In-defect complexes deviate from pure Ge subjected to identical e-irradiation, which is explained on the basis of strain induced by undersized silicon atoms affecting the binding energy of In-V and In-I complexes. Besides the pairing with intrinsic defects the interaction of In with Si atoms is observed resulting in several different configurations. Complementary experiments performed in Ge${}_{0.98}$Si${}_{0.02}$ and Ge${}_{0.94}$Si${}_{0.06}$ elucidate the attractive interaction between In and Si.

7 pages and 4 figures