Disorder and temperature dependence of the Anomalous Hall Effect in thin ferromagnetic films: Microscopic model
arXiv:0710.5416 · doi:10.1103/PhysRevB.76.214415
Abstract
We consider the Anomalous Hall Effect (AHE) in thin disordered ferromagnetic films. Using a microscopic model of electrons in a random potential of identical impurities including spin-orbit coupling, we develop a general formulation for strong, finite range impurity scattering. Explicit calculations are done within a short range but strong impurity scattering to obtain AH conductivities for both the skew scattering and side jump mechanisms. We also evaluate quantum corrections due to interactions and weak localization effects. We show that for arbitrary strength of the impurity scattering, the electron-electron interaction correction to the AH conductivity vanishes exactly due to general symmetry reasons. On the other hand, we find that our explicit evaluation of the weak localization corrections within the strong, short range impurity scattering model can explain the experimentally observed logarithmic temperature dependences in disordered ferromagnetic Fe films.
to be published in Phys. Rev. B
References in corpus (4)
- First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe
- Anomalous Hall effect in 2D Dirac band: link between Kubo-Streda formula and semiclassical Boltzmann equation approach
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Cited by in corpus (6)
- Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4
- Quantum kinetics of anomalous and nonlinear Hall effects in topological semimetals
- Does carrier localization affect the anomalous Hall effect?
- Hall conductivity as the topological invariant in magnetic Brillouin zone in the presence of interactions
- 2D skew scattering in the vicinity and away from resonant scattering condition
- Spin Hall conductivity of interacting two-dimensional electron systems