Strong reduction of field-dependent microwave surface resistance in YBa${}_2$Cu${}_3$O${}_{7-\delta }$ with sub-micrometric BaZrO${}_3$ inclusions

Abstract

We observe a strong reduction of the field induced thin film surface resistance measured at high microwave frequency ($\nu =$47.7 GHz) in YBa${}_2$Cu${}_3$O${}_{7-\delta }$ thin films grown on SrTiO${}_3$ substrates, as a consequence of the introduction of sub-micrometric BaZrO${}_3$ particles. The field increase of the surface resistance is smaller by a factor of $\sim$3 in the film with BaZrO${}_3$ inclusions, while the zero-field properties are not much affected. Combining surface resistance and surface reactance data we conclude (a) that BaZrO${}_3$ inclusions determine very deep and steep pinning wells and (b) that the pinning changes nature with respect to the pure film.

RevTeX; 4 pages, 3 figures; submitted to Applied Physics Letters

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