Realization of a semiconductor-based cavity soliton laser
arXiv:0709.2575 · doi:10.1103/PhysRevLett.100.013907
Abstract
The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase-insensitive and hence expected to be robust for all-optical processing applications. The motility of these structures is also demonstrated.
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