Realization of a semiconductor-based cavity soliton laser

Abstract

The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase-insensitive and hence expected to be robust for all-optical processing applications. The motility of these structures is also demonstrated.

Cited by in corpus (5)

• Cavity Soliton Laser based on mutually coupled semiconductor microresonators
• Optical bistability in a GaAs based polariton diode
• Dark polariton-solitons in semiconductor microcavities
• Drifting instabilities of cavity solitons in vertical cavity surface-emitting lasers with frequency selective feedback
• Effects of a localized beam on the dynamics of excitable cavity solitons