Multiterminal Nanowire Junctions of Silicon: A Theoretical Prediction of Atomic Structure and Electronic Properties

Abstract

Using empirical scheme, atomic structure of a new exotic class of silicon nanoclusters was elaborated upon the central icosahedral core (Si-IC) and pentagonal petals (Si-PP) growing from Si-IC vertexes. It was shown that Si-IC/Si-PP interface formation is energetically preferable. Some experimental observations of silicon nanostructures can be explained by presence of the proposed objects. The Extended Huckel Theory electronic structure calculations demonstrate an ability of the proposed objects to act as nanoscale tunnel junctions.

13 pages, 3 figures, 1 table

References in corpus (1)

• The theoretical DFT study of electronic structure of thin Si/SiO2 quantum nanodots and nanowires

Cited by in corpus (1)

• New symmetric families of silicon quantum dots and their conglomerates as a tunable source of photoluminescence in nanodevices