paper

Vibrational absorption sidebands in the Coulomb blockade regime of single-molecule transistors

arXiv:0709.0876 · doi:10.1103/PhysRevB.77.125306

Abstract

Current-driven vibrational non-equilibrium induces vibrational sidebands in single-molecule transistors which arise from tunneling processes accompanied by absorption of vibrational quanta. Unlike conventional sidebands, these absorption sidebands occur in a regime where the current is nominally Coulomb blockaded. Here, we develop a detailed and analytical theory of absorption sidebands, including current-voltage characteristics as well as shot noise. We discuss the relation of our predictions to recent experiments.

7 pages, 6 figures; revised discussion of relation to experiment

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