Biexciton stability in carbon nanotubes
arXiv:0708.4106 · doi:10.1103/PhysRevLett.99.126806
Abstract
We have applied the quantum Monte Carlo method and tight-binding modelling to calculate the binding energy of biexcitons in semiconductor carbon nanotubes for a wide range of diameters and chiralities. For typical nanotube diameters we find that biexciton binding energies are much larger than previously predicted from variational methods, which easily brings the biexciton binding energy above the room temperature threshold.
revtex4, final, twocolumn. to be published in Phys.Rev.Let. 5 pages 3 figures
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- Complexes of dipolar excitons in layered quasi-two-dimensional nanostructures
- Exciton Hierarchies in Gapped Carbon Nanotubes
- Possibility for exciton Bose-Einstein condensation in carbon nanotubes
- Relative stability of excitonic complexes in quasi-one-dimensional semiconductors
- Evidence for Polariton-Mediated Biexciton Transition in Single-Walled Carbon Nanotubes
- Predicting Excitonic Gaps of Semiconducting Single Walled Carbon Nanotubes From a Field Theoretic Analysis
- Semiconductor quantum tubes: dielectric modulation and excitonic response
- Trions and biexcitons in a nanowire
- Excitonic effects on coherent phonon dynamics in single wall carbon nanotubes