Solute trapping and diffusionless solidification in a binary system

Abstract

Numerous experimental data on the rapid solidification of binary systems exhibit the formation of metastable solid phases with the initial (nominal) chemical composition. This fact is explained by complete solute trapping leading to diffusionless (chemically partitionless) solidification at a finite growth velocity of crystals. Special attention is paid to developing a model of rapid solidification which describes a transition from chemically partitioned to diffusionless growth of crystals. Analytical treatments lead to the condition for complete solute trapping which directly follows from the analysis of the solute diffusion around the solid-liquid interface and atomic attachment and detachment at the interface. The resulting equations for the flux balance at the interface take into account two kinetic parameters: diffusion speed $V_{DI}$ on the interface and diffusion speed $V_D$ in bulk phases. The model describes experimental data on nonequilibrium solute partitioning in solidification of Si-As alloys [M.J. Aziz et al., J. Cryst. Growth {\bf 148}, 172 (1995); Acta Mater. {\bf 48}, 4797 (2000)] for the whole range of solidification velocity investigated.

Regular article in Physical Review E, Vol. 76 (2007)

References in corpus (4)

• Phase-Field Formulation for Quantitative Modeling of Alloy Solidification
• Quantitative Phase Field Model of Alloy Solidification
• Diffuse-interface model for rapid phase transformations in nonequilibrium systems
• Linear morphological stability analysis of the solid-liquid interface in rapid solidification of a binary system

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• Phase-field model of alloy solidification far from chemical equilibrium at the solid-liquid interface
• Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing
• Boundary interface conditions and solute trapping near the transition to diffusionless solidification
• Kinetic phase diagram for a binary system near the transition to diffusionless solidification