Scale dependent superconductor-insulator transition

Abstract

We study the disorder driven superconductor to insulator transition in amorphous films of high carrier-concentration indium-oxide. Using thin films with various sizes and aspect ratios we show that the `critical' sheet-resistance $R_{\square }$ depends systematically on sample geometry; superconductivity disappears when $R_{\square }$ exceeds $\approx 6$k$\Omega$ in large samples. On the other hand, wide and sufficiently short samples of the same batch exhibit superconductivity (judged by conductivity versus temperature) up to $R_{\square }$ which is considerably larger. These results support the inhomogeneous scenario for the superconductor-insulator transition.

Contribution to the proceedings of "Fluctuations and phase transitions in superconductors", Nazareth Ilit, Israel, June 10-14, 2007

References in corpus (1)

• Eigenfunction fractality and pseudogap state near superconductor-insulator transition

Cited by in corpus (3)

• Disorder-Induced Inhomogeneities of the Superconducting State Close to the Superconductor-Insulator Transition
• Hyperactivated resistance in TiN films on the insulating side of the disorder-driven superconductor-insulator transition
• Instanton Glass Generated by Noise in a Josephson-Junction Array