Electronic structures of hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films
arXiv:0708.2318 · doi:10.1103/PhysRevB.77.045137
Abstract
We investigated the electronic structure of multiferroic hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films using both optical spectroscopy and first-principles calculations. Using artificially stabilized hexagonal RMnO3, we extended the optical spectroscopic studies on the hexagonal multiferroic manganite system. We observed two optical transitions located near 1.7 eV and 2.3 eV, in addition to the predominant absorption above 5 eV. With the help of first-principles calculations, we attribute the low-lying optical absorption peaks to inter-site transitions from the oxygen states hybridized strongly with different Mn orbital symmetries to the Mn 3d3z2-r2 state. As the ionic radius of the rare earth ion increased, the lowest peak showed a systematic increase in its peak position. We explained this systematic change in terms of a flattening of the MnO5 triangular bipyramid.
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- Double polarization hysteresis loop induced by the domain pinning by defect dipoles in HoMnO3 epitaxial thin films
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- Dopant-mediated structural and magnetic properties of TbMnO3
- Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films
- Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films
- Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO thin films
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- Ab initio study of the influence of nanoscale doping inhomogeneities in the phase separated state of LaCaMnO