Highly efficient single photon emission from single quantum dots within a two-dimensional photonic bandgap
arXiv:0708.0944 · doi:10.1103/PhysRevB.77.073312
Abstract
We report highly efficient single photon generation from InGaAs self-assembled quantum dots emitting within a two-dimensional photonic bandgap. A strongly suppressed multiphoton probability is obtained for single quantum dots in bulk GaAs and those emitting into the photonic bandgap. In the latter case, photoluminescence saturation spectroscopy is employed to measure a ~17 times enhancement of the average photon extraction efficiency, when compared to quantum dots in bulk GaAs. For quantum dots in the photonic crystal we measure directly an external quantum efficiency up to 26%, much higher than for quantum dots on the same sample without a tailored photonic environment. The results show that highly efficient quantum dot single photon sources can be realized, without the need for complex nanopositioning techniques.
References in corpus (5)
- Quantum nature of a strongly-coupled single quantum dot-cavity system
- Manipulation of the Spontaneous Emission Dynamics of Quantum Dots in 2D Photonic Crystals
- Frequency control of photonic crystal membrane resonators by mono-layer deposition
- Efficient Spatial Redistribution of Quantum Dot Spontaneous Emission from 2D Photonic Crystals
- Electrically probing photonic bandgap phenomena in contacted defect nanocavities