Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction

Abstract

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene $p$-$n$-$p$ junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the $p$ and $n$ regions. These fractional plateaus, originating from chiral edge states equilibration at the $p$-$n$ interfaces, exhibit sensitivity to inter-edge backscattering which is found to be strong for some of the plateuas and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.

4 pages 4 figures, to appear in Phys. Rev. Lett. Original version arXiv:0705.3044v1 was separated and expanded to this current version and arXiv:0709.1731

References in corpus (4)

• Electric Field Effect in Atomically Thin Carbon Films
• Unconventional Integer Quantum Hall effect in graphene
• Transport measurements across a tunable potential barrier in graphene
• Quantized Transport in Graphene p-n Junctions in Magnetic Field

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• Density-Functional Theory of Graphene Sheets
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• Inter-Layer Screening Length to Electric Field in Thin Graphite Film
• Conformal Invariance and Shape-Dependent Conductance of Graphene Samples
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