Reentrant Kondo effect in Landau quantized graphene
arXiv:0705.1934 · doi:10.1103/PhysRevB.76.115435
Abstract
We have studied the interplay of an Anderson impurity in Landau quantized graphene, with special emphasis on the influence of the chemical potential. Within the slave-boson mean-field theory, we found reentrant Kondo behaviour by varying the chemical potential or gate voltage. Between Landau levels, the density of states is suppressed, and by changing the graphene's Fermi energy, we cross from metallic to semiconducting regions. Hence, the corresponding Kondo behaviour is also influenced. The f-level spectral function reveals both the presence of Landau levels in the conduction band and the Kondo resonance.
8 pages, 6 figures
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- Single or multi-flavor Kondo effect in graphene
- Scanning tunneling spectroscopy of a magnetic atom on graphene in the Kondo regime
- Magnetic adatoms on graphene in the Kondo regime: an Anderson model treatment
- Kondo effect in monolayer and bilayer graphene: physical realizations of the multi-channel Kondo models
- Kondo impurity on the honeycomb lattice at half-filling
- Fermi-edge transmission resonance in graphene driven by a single Coulomb impurity
- Magneto-transport in impurity-doped few-layer graphene spin valve
- Topological view on magnetic adatoms in graphene
- Quantum oscillations of Kondo screening phases in strong magnetic fields