Ab-initio formulation of the 4-point conductance of interacting electronic systems

Abstract

We derive an expression for the 4-point conductance of a general quantum junction in terms of the density response function. Our formulation allows us to show that the 4-point conductance of an interacting electronic system possessing either a geometrical constriction and/or an opaque barrier becomes identical to the macroscopically measurable 2-point conductance. Within time-dependent density-functional theory the formulation leads to a direct identification of the functional form of the exchange-correlation kernel that is important for the conductance. We demonstrate the practical implementationof our formula for a metal-vacuum-metal interface.

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Cited by in corpus (9)

• Conserving GW scheme for nonequilibrium quantum transport in molecular contacts
• Density functional calculations of nanoscale conductance
• Memory matrix theory of magnetotransport in strange metals
• Impact of Exchange-Correlation Effects on the IV Characteristics of a Molecular Junction
• Incompleteness of the Landauer Formula for Electronic Transport
• Ab initio complex band structure of conjugated polymers: Effects of hydrid DFT and GW schemes
• Towards a dynamical approach to the calculation of the figure of merit of thermoelectric nanoscale devices
• Non-adiabatic time-dependent density functional theory of the impurity resistivity of metals
• First-Principles conductance of nanoscale junctions from the polarizability of finite systems