Scanning magnetoresistance microscopy of atom chips

Abstract

Surface based geometries of microfabricated wires or patterned magnetic films can be used to magnetically trap and manipulate ultracold neutral atoms or Bose-Einstein condensates. We investigate the magnetic properties of such atom chips using a scanning magnetoresistive (MR) microscope with high spatial resolution and high field sensitivity. We show that MR sensors are ideally suited to observe small variations of the magnetic field caused by imperfections in the wires or magnetic materials which ultimately lead to fragmentation of ultracold atom clouds. Measurements are also provided for the magnetic field produced by a thin current-carrying wire with small geometric modulations along the edge. Comparisons of our measurements with a full numeric calculation of the current flow in the wire and the subsequent magnetic field show excellent agreement. Our results highlight the use of scanning MR microscopy as a convenient and powerful technique for precisely characterizing the magnetic fields produced near the surface of atom chips.

6 pages, 6 figures

References in corpus (4)

• Long Phase Coherence Time and Number Squeezing of two Bose-Einstein Condensates on an Atom Chip
• Condensate splitting in an asymmetric double well for atom chip based sensors
• Effect of Magnetization Inhomogeneity on Magnetic Microtraps for Atoms
• Asymmetric double-well potential for single atom interferometry