Resonant activation in bistable semiconductor lasers
arXiv:0704.0206 · doi:10.1103/PhysRevA.76.023815
Abstract
We theoretically investigate the possibility of observing resonant activation in the hopping dynamics of two-mode semiconductor lasers. We present a series of simulations of a rate-equations model under random and periodic modulation of the bias current. In both cases, for an optimal choice of the modulation time-scale, the hopping times between the stable lasing modes attain a minimum. The simulation data are understood by means of an effective one-dimensional Langevin equation with multiplicative fluctuations. Our conclusions apply to both Edge Emitting and Vertical Cavity Lasers, thus opening the way to several experimental tests in such optical systems.
Submitted to Phys. Rev. A
References in corpus (5)
- Experimental Investigation of Resonant Activation
- Activated escape of periodically driven systems
- Rate description of Fokker-Planck processes with time dependent parameters
- Experimental Study of Noise-induced Phase Synchronization in Vertical-cavity Lasers
- Multiplicative noise in the longitudinal mode dynamics of a bulk semiconductor laser