Anisotropic implantation damage build-up and crystal recovery in ${\hat{I}}^2$-Ga${}_2$O${}_3$

Duarte Magalhães Esteves, Sérgio Magalhães, Ângelo Rafael Granadeiro da Costa +2

The present work aims at investigating the defect accumulation and recovery dynamics in the inherently anisotropic ${\hat{I}}^2$-Ga${}_2$O${}_3$ lattice. A systematic Rutherford Backscattering…