110 citations
- Industrial Technology Research InstituteTW3 papers
- Institute of Physics, Academia SinicaTW3 papers
- Japan Synchrotron Radiation Research InstituteJP2 papers
- Kyoto UniversityJP2 papers
- Nagoya UniversityJP2 papers
- National Defense Academy of JapanJP2 papers
- National Taiwan UniversityTW2 papers
- National Yang Ming Chiao Tung UniversityTW2 papers
- Ohio UniversityUS2 papers
- Pusan National UniversityKR2 papers
- The University of OsakaJP2 papers
- Tohoku UniversityJP2 papers
4 papers · 1 filter
A Low-Temperature Specific Heat Study of the Giant Dielectric Constant Materials
C. P. Sun, Jianjun Liu, J. -Y. Lin +3
Low-temperature specific-heat study has been performed on the insulating giant dielectric constant material CaCu3Ti4O12 and two related compounds, Bi2/3Cu3Ti4O12 and La0.5Na0.5Cu3T…
On the structure of the Si(103) surface
C. V. Ciobanu, F. C. Chuang, D. E. Lytle
Although (103) is a stable nominal orientation for both silicon and germanium, experimental observations revealed that in the case of silicon this surface remains disordered on an…
Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures
Ikai Lo, M. H. Gau, J. K. Tsai +5
We have confirmed the k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures. Anomalous beating pattern in Shubnikov-de Haas measurements arises from the interferenc…
Self-regulated charge transfer and band tilt in nm-scale polar GaN films
M. -H Tsai, S. K. Dey
To date, the generic polarization of Bernardini, Fiorentini and Vanderbilt (PBFV) has been widely used to address the issue of polarity in III-V nitride semiconductors, but improve…