output
19922026
most citedSciPy 1.0--Fundamental Algorithms for Scientific Computing in Python

40.2k citations

Showing 2024 · cond-mat.mes-hallShow all

6 papers · 2 filters

cond-mat.mes-hall2024★ 2 cited

Charge-density-wave control by adatom manipulation and its effect on magnetic nanostructures

Lisa M. Rütten, Eva Liebhaber, Kai Rossnagel +1

Charge-density waves (CDWs) are correlated states of matter, where the electronic density is modulated periodically as a consequence of electronic and phononic interactions. Often,…

cond-mat.mes-hall2024★ 1 cited

Resistively detected electron spin resonance and g-factor in few-layer exfoliated MoS2 devices

Chithra H. Sharma, Appanna Parvangada, Lars Tiemann +3

MoS2 has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of M…

cond-mat.mes-hall2024★ 1 cited

Strain-driven domain wall network with chiral junctions in an antiferromagnet

Vishesh Saxena, Mara Gutzeit, Arturo Rodríguez-Sota +6

Materials with antiferromagnetic order have recently emerged as promising candidates in spintronics based on their beneficial characteristics such as vanishing stray fields and ult…

cond-mat.mes-hall2024★ 17 cited

Strain-induced activation of chiral-phonon emission in monolayer WS

Yiming Pan, Fabio Caruso

We report a theoretical investigation of the ultrafast dynamics of electrons and phonons in strained monolayer WS following photoexcitation. We show that strain substantially m…

cond-mat.mes-hall2024★ 13 cited

Wave-function engineering on superconducting substrates: Chiral Yu-Shiba-Rusinov molecules

Lisa M. Rütten, Harald Schmid, Eva Liebhaber +6

Magnetic adatoms on superconductors give rise to Yu-Shiba-Rusinov (YSR) states that hold considerable interest for the design of topological superconductivity. Here, we show that Y…

cond-mat.mes-hall2024★ 9 cited

Non-zero crossing current-voltage characteristics of interface-type resistive switching devices

Sahitya Yarragolla, Torben Hemke, Jan Trieschmann +1

A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully unders…