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20022026
most citedObservation of a new particle in the search for the Standard Model Higgs boson with the ATLAS detector at the LHC

10.9k citations

Showing 2014 · cond-mat.mtrl-sciShow all

14 papers · 2 filters

cond-mat.mtrl-sci20142 cited

Spin transfer torques generated by the anomalous Hall effect and anisotropic magnetoresistance

Tomohiro Taniguchi, J. Grollier, M. D. Stiles

Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a si…

cond-mat.mtrl-sci20146 cited

Laser doping for ohmic contacts in n-type Ge

F. Chiodi, A. D. Chepelianskii, C. Gardes +3

We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the l…

cond-mat.mtrl-sci2014135 cited

Spintronics with graphene

Pierre Seneor, Bruno Dlubak, Marie-Blandine Martin +3

Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected…

cond-mat.mtrl-sci2014150 cited

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

Bruno Dlubak, Marie-Blandine Martin, Robert S. Weatherup +9

We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nic…

cond-mat.mtrl-sci201421 cited

Evidence for anisotropic dielectric properties of monoclinic hafnia using high-resolution TEM valence electron energy-loss spectroscopy and ab initio time-dependent density-functional theory

Cyril Guedj, Linda Hung, Alberto Zobelli +3

The effect of nanocrystal orientation on the energy loss spectra of monoclinic hafnia (m-HfO) is measured by high resolution transmission electron microscopy (HRTEM) and valenc…

cond-mat.mtrl-sci201411 cited

Resistive switching phenomena in TiOx nanoparticle layers for memory applications

Emanuelle Goren, Mariana Ungureanu, Raul Zazpe +5

Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conven…