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- Chinese Academy of SciencesCN36 papers
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4 papers · 2 filters
Investigation of interface spacing, stability, band offsets and electronic properties on (001) SrHfO3/GaAs interface : First principles calculations
Li-Bin Shi, Xiao-Ming Xiu, Xu-Yang Liu +3
SrHfO3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. SrHfO3/GaAs interface has attracted attention due to its unique properties. In this paper, th…
First principles investigation of nitrogenated holey graphene
Cui-Yan Xu, Hai-Kuan Dong, Li-Bin Shi
Nitrogenated holey graphene (NHG) has attracted much attention because of its semiconducting properties. However, the stacking orders and defect properties have not been investigat…
Amorphized graphene: A stiff material with low thermal conductivity
B Mortazavi, Z Fan, LFC Pereira +2
All-carbon heterostructures have been produced recently via focused ion beam patterning of single layer graphene. Amorphized graphene is similar to a graphene sheet in which some h…
First principles calculations of the interface properties of amorphous-Al2O3/MoS2 under non-strain and biaxial strain conditions
Li-Bin Shi, Ming-Biao Li, Xiao-Ming Xiu +5
Al2O3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. Al2O3 films deposited on semiconductors usually exhibit amorphous due to lattice mismatch. Com…