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- Centre National de la Recherche ScientifiqueFR31 papers
- Laboratoire Paul PainlevéFR24 papers
- Institut d'électronique de microélectronique et de nanotechnologieFR11 papers
- Laboratoire de Physique des PlasmasFR9 papers
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7 papers · 1 filter
Phonons in Slow Motion: Dispersion Relations in Ultra-Thin Si Membranes
John Cuffe, Emigdio Chavez, Andrey Shchepetov +11
We report the changes in dispersion relations of hypersonic acoustic phonons in free-standing silicon membranes as thin as \sim 8 nm. We observe a reduction of the phase and group…
Molecule-Electrode Interface Energetics in Molecular Junction: a Transition Voltage Spectroscopy Study
Guillaume Ricœur, Stéphane Lenfant, David Guérin +1
We assess the performances of the transition voltage spectroscopy (TVS) method to determine the energies of the molecular orbitals involved in the electronic transport though molec…
Nanoelectronics
G. Allan, C. Delerue, C. Krzeminski +1
In this chapter we intend to discuss the major trends in the evolution of microelectronics and its eventual transition to nanoelectronics. As it is well known, there is a continuou…
One-by-one trap activation in silicon nanowire transistors
N. Clement, K. Nishiguchi, A. Fujiwara +1
Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an e…
Imaging charge and spin diffusion of minority carriers in GaAs
I. Favorskiy, D. Vu, E. Peytavit +3
Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equi…
Synthesis and electrical properties of fullerene-based molecular junctions on silicon substrate
D. Guerin, S. Lenfant, S. Godey +1
We report the synthesis and the electrical properties of fullerene-based molecular junctions on silicon substrate in which the highly π-conjugated molecule C60 (πquantum well) is i…