Molecular Nitrogen Formation in Nitrogen-Implanted (100) ${\hat{I}}^2-G{a}_2{O}_3$ Revealed by Temperature-Dependent $N$ $K$-edge XANES

I. N. Demchenko, Y. Syryanyy, A. Shokri +13

The realization of $p$-type doping in wide-band-gap oxide semiconductors remains a major challenge, particularly in ${\hat{I}}^2-G{a}_2{O}_3$ where nitrogen has long been considered a potential…