295 citations
- Harbin University of Science and TechnologyCN17 papers
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10 papers · 1 filter
Insulating moiré homobilayers lack a threefold symmetric second harmonic generation
Luis Enrique Rosas-Hernandez, Jose Luis Cabellos, Angiolo Huamán +2
Atoms within moiré bilayers relax in-plane to minimize elastic energy [e.g., Cazeaux et al., J. Elast. 154, 443 (2023)]; such relaxation brings their space group symmetries down to…
Substrate interference and strain in the second harmonic generation from MoSe monolayers
S. Puri, S. Patel, J. L. Cabellos +4
Nonlinear optical materials of atomic thickness--such as non-centrosymmetric 2H transition metal dichalcogenide monolayers--have a second order nonlinear susceptibility ()…
Nonlinear photomagnetization in insulators
Bernardo S. Mendoza, Norberto Arzate-Plata, Nicolas Tancogne-Dejean +1
Nonlinear photomagnetization is a process by which an oscillating electric field induces a static magnetization. We show that all 32 crystallographic point groups admit such spin p…
Im spectra of 110-cut GaAs, GaP, and Si near the two-photon absorption band edge
Brandon J Furey, Rodrigo M. Barba-Barba, Ramon Carriles +3
Spectra of the degenerate two-photon absorption coefficient , anisotropy parameter , and dichroism parameter of crystalline 110-cut Ga…
Exploration of free energy surface and thermal effects on relative population and infrared spectrum of the BeB fluxional cluster
Carlos Emiliano Buelna-Garcia, Cesar Castillo-Quevedo, Jesus Manuel Quiroz-Castillo +5
The starting point to understanding cluster properties is the putative global minimum and all the nearby local energy minima; however, locating them is computationally expensive an…
Terahertz radiation of jerk photocurrent
Bernardo S. Mendoza, Benjamin M. Fregoso
We compute the jerk current tensor of GaAs, Si, and ferroelectric single-layer GeS, GeSe, SnS, and SnSe. We find peak values of the order of mA/Vs in GaAs and Si…