Machine-learning-guided molecular dynamics simulations of point defect evolution in beta-Ga2O3 during ion implantation and annealing

Huawen Li, Mengzhi Yan, Zongwei Xu +2

In beta-gallium oxide (beta-Ga2O3), Ga-ion implantation and annealing induce abundant point defects. To overcome conventional Wigner-Seitz (WS) defect analysis limitations, a defec…